High Switching Speed and Low Power Applications of HJ DG TFET

Tunnel field effect transistor (TFET) technology is unique of the prominent devices in low power applications. The band-to-band tunnel switching mechanism sets TFET apart from traditional MOSFET technology. It helps to reduce leakage currents. major advantage Sub threshold slope smaller than 60mv/decade. Newer technologies are expected change gate, architectures, channel materials and transport mechanisms. In this point view FET has play most imminent role least current also need overcome limitations drive TFET. proposed model hetero junction double gate attain superior ON state current, off-state better steeper i.e., 4.94 x10-5A/µm, 32.3 x10-17A/µm 28.3mv/decade as compared with single conventional device. This design suitable for high speed application.